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产品分类
射频PTVA102001EA V1 R0
PTVA102001EA V1 R0
Cree/Wolfspeed
无铅环保型
卧式安装
航空
电压合成
1600
900
产品信息
PTVA102001EA V1 R0 Description
ThePTVA102001EA V1 R0 is a 200-watt LDMOS FET intended for use
in power amplifier applications in the 960 to 1600 MHz frequency
band. Features include high gain and thermally-enhanced package
with bolt-down flange. Manufactured with Wolfspeed's advanced
LDMOS process, this device provides excellent thermal performance
and superior reliability
PTVA102001EA V1 R0
Package H-36265-2
Features
• Input matched
• Capable of handling 10:1 VSWR @50 V, 200 W
(CW) output power
• Integrated ESD protection
• Low thermal resistance
• Pb-free and RoHS compliant
PTVA102001EA V1 R0规格
制造商: Cree, Inc.
产品种类: 射频金属氧化物半导体场效应(RF MOSFET)晶体管
RoHS: 详细信息
晶体管极性: N-Channel
技术: Si
Vds-漏源极击穿电压: 105 V
Rds On-漏源导通电阻: 340 mOhms
增益: 18.5 dB
输出功率: 200 W
工作温度: + 225 C
安装风格: SMD/SMT
封装 / 箱体: H-36265-2
封装: Cut Tape
封装: MouseReel
封装: Reel
工作频率: 960 MHz to 1600 MHz
类型: RF Power MOSFET
商标: Wolfspeed / Cree
通道数量: 1 Channel
产品类型: RF MOSFET Transistors
工厂包装数量: 50
子类别: MOSFETs
Vgs - 栅极-源极电压: 10 V
