深圳市合芯力科技有限公司

MT40A256M16GE-083E:B  MT40A256M16GE-083E:B  MT40A256M16GE-083E:B  MT40A256M16GE-083E:B

存储器类型 易失

存储器格式 DRAM

技术 SDRAM - DDR4

存储容量 4Gb （256M x 16）

存储器接口 并联

时钟频率 1.2GHz

写周期时间 - 字，页 -

电压 - 电源 1.14V ~ 1.26V

工作温度 0°C ~ 95°C（TC）

安装类型 表面贴装型

封装/外壳 96-TFBGA

供应商器件封装 96-FBGA（9x14）

Features

• VDD = VDDQ = 1.2V ±60mV

• VPP = 2.5V, –125mV/+250mV

• On-die, internal, adjustable VREFDQ generation

• 1.2V pseudo open-drain I/O

• TC maximum up to 95°C

– 64ms, 8192-cycle refresh up to 85°C

– 32ms, 8192-cycle refresh at >85°C to 95°C

• 16 internal banks (x4, x8): 4 groups of 4 banks each

• 8 internal banks (x16): 2 groups of 4 banks each

• 8n-bit prefetch architecture

• Programmable data strobe preambles

• Data strobe preamble training

• Command/Address latency (CAL)

• Multipurpose register READ and WRITE capability

• Write leveling

• Self refresh mode

• Low-power auto self refresh (LPASR)

• Temperature controlled refresh (TCR)

• Fine granularity refresh

• Self refresh abort

• Maximum power saving

• Output driver calibration

• Nominal, park, and dynamic on-die termination

(ODT)

• Data bus inversion (DBI) for data bus

• Command/Address (CA) parity

• Databus write cyclic redundancy check (CRC)

• Per-DRAM addressability

• Connectivity test

• sPPR and hPPR capability

• JEDEC JESD-79-4 compliant

Options1 Marking

• Operating temperature

– Commercial (0° ื TC ื 95°C) None

– Industrial (–40° ื TC ื 95°C) IT

– Revision :A